Powering up gallium oxide metal-oxide-semiconductor field-effect transistors
First demonstration of vertical Ga2O3 MOSFET: Planar structure with a current aperture | Semantic Scholar
Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices - ScienceDirect
Review—Recent Advances in Designing Gallium Oxide MOSFET for RF Application
Press Release | First Demonstration of Gallium Oxide (Ga2O3) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) | NICT-National Institute of Information and Communications Technology
Gallium Oxide Epiwafers
プレスリリース | “酸化ガリウム（Ga2O3）MOSトランジスタ”を世界で初めて実現！ | NICT-情報通信研究機構
Vertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process - News
Passivation coating increases power capabilities of Ga2O3 semiconductor
World's First Normally-Off Gallium-Oxide MOSFET Fabricated - News
Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs - ScienceDirect
Sn-doped gallium oxide MOSFET: (a) cross-sectional schematic, (b)... | Download Scientific Diagram
A review of the most recent progresses of state-of-art gallium oxide power devices
Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs | Nanoscale Research Letters | Full Text
Passivation pushes gallium oxide transistor to over 8kV
Crystals | Free Full-Text | β-Ga2O3-Based Power Devices: A Concise Review
Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping | Semantic Scholar
Atlas Simulation of a Wide Bandgap Gallium Oxide (Ga2O3) MOSFET - Silvaco
A 800 V β‐Ga2O3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm−2 - Feng - 2019 - physica status solidi (a) - Wiley Online Library
Hydrogen-Terminated Diamond MOSFETs Using Ultrathin Glassy Ga2O3 Dielectric Formed by Low-Temperature Liquid Metal Printing Method | ACS Applied Electronic Materials
β-Ga2O3 material properties, growth technologies, and devices: a review | SpringerLink
The structure of a the β-Ga2O3 MOSFET and b the β-Ga2O3 NCFET | Download Scientific Diagram
RF performance evaluation of p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET
First vertical gallium oxide power MOSFET developed ...
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge: Applied Physics Letters: Vol 110, No 14
Development of world's first vertical gallium oxide transistor through ion implantation doping
